MAS3132E - Panasonic Semiconductor

MAS3132E Switching Diodes

Switching Diodes MAS3132E Silicon epitaxial planar type Unit: mm For high-speed switching circuits ■ Features • Two elements are contained in one package, allowing highdensity mounting • Short reverse recovery time trr • Small terminal capacitance Ct 0.33+0.05 –0.02 3 0.10+0.05 –0.02 (0.40) (0.40) 0.80±0.05 1.20±0.05 5˚ 0 to 0.01 Parameter Reverse vol.

Features

• Two elements are contained in one package, allowing highdensity mounting
• Short reverse recovery time trr
• Small terminal capacitance Ct 0.33+0.05
  –0.02 3 0.10+0.05
  –0.02 (0.40) (0.40) 0.80±0.05 1.20±0.05 5˚ 0 to 0.01 Parameter Reverse voltage Maximum peak reverse voltage Forward current Single Double Peak forward current Single Double Non-repetitive peak forward surge current
* Symbol VR VRM IF IFM IFSM Tj Tstg Rating 80 80 100 150 225 340 500 750 150 −55 to +150 Unit V V mA 0.52±0.03
■ Absolute Maximum Ratings Ta = 25°C 0.15 min. 0.23+0.05
  –0.02 1 2 5˚ mA 1: Anode 1 2: A.