MAPRST0002 - MA-COM Technology

MAPRST0002 Radar Pulsed Power Transistor

MAPRST0002 Radar Pulsed Power Transistor 50W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal input and output impedance matching Hermetic.

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• NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal input and output impedance matching Hermetic metal/ceramic package RoHS compliant M/A-COM Products Released, 30 May 07 Outline Drawing Absolute Maximum Ratings at 25°C Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Power Dissipation @ +25°C Storage Temperature Junction Temperature Symbol VCES VEBO IC PTOT TSTG TJ Rating 70 3.0 3.5 10.