MAGX-000035-01000S - MA-COM

MAGX-000035-01000S Power Transistor

The MAGX-000035-01000X is a gold-metalized unmatched Gallium Nitride (GaN) on Silicon Carbide RF power transistor suitable for a variety of RF power amplifier applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over multiple octave bandwidths for today’s.

Features

 GaN Depletion-Mode HEMT Microwave Transistor
 Common-Source configuration
 No internal matching
 Broadband Class AB operation
 RoHS
* Compliant
 +50 V Typical Operation
 MTTF = 600 years Description The MAGX-000035-01000X is a gold-metalized unmatched Gallium Nitride (GaN) on Silicon Carbide RF power transistor suitable for a variety of RF power amplifier applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over multiple octave bandwidths for today’s demanding application need.