MA786 - Panasonic

MA786 Silicon epitaxial planar type

Schottky Barrier Diodes (SBD) MA3X786 Silicon epitaxial planar type For super-high speed switching circuit For small current rectification I Features • Allowing to rectify under (IF(AV) = 100 mA) condition • Optimum for high-frequency rectification because of its short reverse recovery time (trr) • Low VF (forward rise voltage), with high rectification effi.

Features

• Allowing to rectify under (IF(AV) = 100 mA) condition
• Optimum for high-frequency rectification because of its short reverse recovery time (trr)
• Low VF (forward rise voltage), with high rectification efficiency 2.9 − 0.05 + 0.2 2.8 − 0.3 0.65 ± 0.15 1.5 + 0.2 Unit : mm 0.65 ± 0.15 + 0.25 − 0.05 0.95 1.9 ± 0.2 1 3 2 0.95 1.45 0 to 0.1 Parameter Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Average forward current Non-repetitive peak forward surge current
* Junction temperature Storage temperature Symbol VR VRRM IFM IF(AV) IFSM Tj Tstg Rating 30 30 300.