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MA739 - Panasonic Semiconductor

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MA739 Silicon epitaxial planar type

www.DataSheet4U.com Schottky Barrier Diodes (SBD) MA2Q739 (MA739) Silicon epitaxial planar type Unit : mm For high-frequency rectification 4.4 ± 0.3 0 to 0.05 • Forward current (average) IF(AV): 0.7 A type • Reverse voltage (DC value) VR: 90 V • Allowing automatic insertion with the emboss taping 2.5 ± 0.3 I Features 2 1 0.25 − 0.05 I Absolute Maxi.

Features

2 1 0.25 − 0.05 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current
*1 Symbol VR VRRM IF(AV) IFSM Tj Tstg Rating 90 90 0.7 10 −40 to +125 −40 to +125 Unit V V A A °C °C 1.2 ± 0.4 5.0 − 0.1 + 0.4 1.2 ± 0.4 Non-repetitive peak forward surge current
*2 Junction temperature Storage temperature 1 : Anode 2 : Cathode New Mini-Power Type Package (2-pin) Marking Symbol: PE Note)
*1 : With a printed-circuit board
*2 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) I Electrical Characteristics Ta = .

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