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Schottky Barrier Diodes (SBD) MA4X714 Silicon epitaxial planar type Unit : mm For switching circuits For wave detection circuit • Two MA3X704As are contained in one package (Two diodes in a different direction) • Optimum for low-voltage rectification because of its low forward rise voltage (VF) • Optimum for high-frequency rectification because of its shor.
0.5 R 4 1
+ 0.1
3
0.4 − 0.05
2
0.2 1.1 − 0.1
+ 0.2
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Peak forward current Forward current (DC) Single Double
* Single Double
* Tj Tstg IF Symbol VR IFM Rating 30 150 110 30 20 125 −55 to +125 °C °C mA Unit V mA
0.4 ± 0.2
1 : Cathode 1 2 : Anode 2 3 : Cathode 2 4 : Anode 1 Mini Type Package (4-pin)
Marking Symbol: M1P Internal Connection
4 3 1 2
Junction temperature Storage temperature Note)
* : Value per chip
I Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Te.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MA7120 |
Panasonic Semiconductor |
(MAZ7000 Series) Silicon planar type |
|
| 2 | MA713 |
Panasonic |
Schottky Barrier Diodes (SBD) |
|
| 3 | MA716 |
Panasonic |
Schottky Barrier Diodes |
|
| 4 | MA7160 |
Panasonic |
Silicon planar type |
|
| 5 | MA717 |
Panasonic |
Schottky Barrier Diodes (SBD) |
|
| 6 | MA718 |
Panasonic |
Silicon epitaxial planar type |
|
| 7 | MA700 |
Panasonic |
Silicon epitaxial planar type |
|
| 8 | MA700 |
EIC |
SCHOTTKY BARRIER DIODES |
|
| 9 | MA7000 |
Panasonic |
Silicon Planar Type |
|
| 10 | MA7001 |
Dynex |
Radiation Hard 512x9 Bit FIFO |
|
| 11 | MA700A |
Panasonic |
Silicon epitaxial planar type |
|
| 12 | MA700A |
EIC |
SCHOTTKY BARRIER DIODES |
|