MA2J728 - Panasonic

MA2J728 Schottky Barrier Diodes (SBD)

Schottky Barrier Diodes (SBD) MA2J728 Silicon epitaxial planar type Unit : mm For super-high speed switching circuit For wave detection circuit K A 0.625 0.4 ± 0.1 1.7 ± 0.1 2.5 ± 0.2 0.4 ± 0.1 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak reverse voltage Peak forward current Forward current (DC) Junction temperature Storage .

Features

0.3 % 1 MA2J728 IF  V F 103 Schottky Barrier Diodes (SBD) VF  Ta 1.0 103 IR  VR 102 75°C 25°C Ta = 125°C − 20°C Forward current IF (mA) 0.8 102 Forward voltage VF (V) IF = 30 mA 0.6 10 mA 0.4 10 Reverse current IR (µA) Ta = 125°C 10 75°C 1 1 25°C 10−1 10−1 0.2 1 mA 10−2 0 0.2 0.4 0.6 0.8 1.0 1.2 0 −40 10−2 0 40 80 120 160 200 0 5 10 15 20 25 30 Forward voltage VF (V) Ambient temperature Ta (°C) Reverse voltage VR (V) Ct  VR 3.0 f = 1 MHz Ta = 25°C IR  T a 103 Terminal capacitance Ct (pF) 2.5 102 2.0 Reverse current IR (µA) VR = 30 V.