MA2H736 - Panasonic

MA2H736 Schottky Barrier Diodes (SBD)

Schottky Barrier Diodes (SBD) MA2H736 Silicon epitaxial planar type Unit : mm For switching circuits 3.2 ± 0.1 0 to 0.05 • Small and thin Half New Mini-power package • Allowing to rectify under (IF(AV) = 1 A) condition 1.9 ± 0.1 2 1 I Absolute Maximum Ratings Ta = 25°C Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Non-re.

Features

1 MA2H736 IF  V F 1 Schottky Barrier Diodes (SBD) VF  Ta 0.8 0.7 1 75°C 25°C − 20°C 10 Ta = 125°C IR  VR 10−1 Ta = 125°C Forward current IF (A) 0.6 0.5 0.4 0.3 0.2 0.1 Reverse current IR (mA) Forward voltage VF (V) 75°C 10−1 10−2 IF = 1 A 10−3 10−2 25°C 10−4 100 mA 10 mA 10−3 10−5 0 0.1 0.2 0.3 0.4 0.5 0.6 0
  –40 10−4 0 40 80 120 160 200 0 10 20 30 40 50 60 Forward voltage VF (V) Ambient temperature Ta (°C) Reverse voltage VR (V) IR  T a 102 300 Ct  VR 10 Reverse current IR (mA) VR = 40 V 10 V 5V Terminal capacitance Ct (pF) 250 200 1 .