M65609E - ATMEL Corporation

M65609E Rad Hard 128K x 8 3.3-volt Very Low Power CMOS SRAM

The M65609E is a very low power CMOS static RAM organized as 131,072 x 8 bits. Utilizing an array of six transistors (6T) memory cells, the M65609E combines an extremely low standby supply current with a fast access time at 40 ns. The high stability of the 6T cell provides excellent protection against soft errors due to noise. The M65609E is processed accord.

Features

• Operating Voltage: 3.3V
• Access Time: 40 ns
• Very Low Power Consumption
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  – Active: 160 mW (Max)
  – Standby: 70 µW (Typ) Wide Temperature Range: -55°C to +125°C MFP 32 leads 400 Mils Width Package TTL Compatible Inputs and Outputs Asynchronous Designed on 0.35µm Process No Single Event Latch-up below a LET threshold of 80 MeV/mg/cm2 Tested up to a Total Dose of 200 Krad (Si) according to MIL STD 883 Method 1019 Quality grades: QML Q or V with SMD 5962-02501 Description The M65609E is a very low power CMOS static RAM organized as 131,072 x 8 bits. Utilizing an array of six tra.