M5M5256RV-70XL - Mitsubishi

M5M5256RV-70XL 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

The M5M5256DP,FP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current is small enough for battery back-up application. It is ideal for the m.

Features

13 A8 A9 A11 /OE A10 /S DQ8 DQ7 DQ6 DQ5 DQ4 M5M5256DP,FP FEATURE Type Access Power supply current time Active Stand-by (max) (max) (max) 45ns 55ns 70ns 45ns 55ns 70ns 55mA (Vcc=5.5V) Outline 28P4 (DP) 28P2W-C (DFP) M5M5256DP, FP,VP,RV-45LL M5M5256DP, FP,VP,RV-55LL M5M5256DP, FP,VP,RV-70LL M5M5256DP, FP,VP,RV-45XL M5M5256DP, FP,VP,RV-55XL M5M5256DP, FP,VP,RV-70XL 20µA (Vcc=5.5V) 5µA (Vcc=5.5V) 0.05µA (Vcc=3.0V, Typical)
•Single +5V power supply
•No clocks, no refresh
•Data-Hold on +2.0V power supply
•Directly TTL compatible : all inputs and outputs
•Three-state outputs : OR-tie capabili.