M5M5256DFP-12VLL-I - Mitsubishi

M5M5256DFP-12VLL-I 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current is small enough for battery back-up application. It is ideal for the mem.

Features

16 15 Vcc /W A13 A8 A9 A11 /OE A10 /S DQ8 DQ7 DQ6 DQ5 DQ4 M5M5256DFP -I FEATURE Type Access Power supply current time Active Stand-by (max) (max) (max) 100ns 120ns 150ns 100ns 120ns 150ns 20mA (Vcc=3.6V) Outline 28P2W-C (DFP) 22 /OE 23 A11 24 A9 25 A8 26 A13 27 /W 28Vcc 1 A14 2 A12 3 A7 4 A6 5 A5 6 A4 7 A3 A10 21 /S 20 DQ8 19 DQ7 18 DQ6 17 DQ5 16 DQ415 GND 14 DQ3 13 DQ2 12 DQ1 11 A0 10 A1 9 A2 8 M5M5256DFP,VP,RV-10VLL M5M5256DFP,VP,RV-12VLL M5M5256DFP,VP,RV-15VLL M5M5256DFP,VP,RV-10VXL M5M5256DFP,VP,RV-12VXL M5M5256DFP,VP,RV-15VXL 24µA (Vcc=3.6V) 4.8µA (Vcc=3.6V) 0.05µA (Vcc=3.0V, Typic.