M470L3224BT0 - Samsung semiconductor

M470L3224BT0 256MB DDR SDRAM MODULE

The Samsung M470L3224BT0 is 32M bit x 64 Double Data Rate SDRAM high density memory modules based on first gen of 256Mb DDR SDRAM respectively. The Samsung M470L3224BT0 consists of eight CMOS 16M x 16 bit with 4banks Double Data Rate SDRAMs in 66pin TSOPII(400mil) packages mounted on a 200pin glass-epoxy substrate. Four 0.1uF decoupling capacitors are mounte.

Features

it board in parallel for each DDR SDRAM. The M470L3224BT0 is Dual In-line Memory Modules and intended for mounting into 200pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operating frequencies, programmable latencies and burst lengths allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. FEATURE
• Performance range Part No. Max Freq. Interface SSTL_2 M470L3224BT0-C(L)A2 133MHz(7.5ns@CL=2) M470L3224BT0-C(L)B0 133M.