Pin Name A0 ~ A12 BA0 ~ BA1 DQ0 ~ DQ63 DQS0 ~ DQS17 CK0, CK0 CKE0, CKE1(for 2 Row) CS0, CS1(for 2 Row) RAS CAS WE CB0 ~ CB7 Function Address input (Multiplexed) Bank Select Address Data input/output Data Strobe input/output Clock input Clock enable input Chip select input Row address strobe Column address strobe Write enable Check bit(Data-in/data-out) Pin N.
DR SDRAM
Component Composition 64Mx8( K4H510838B)
* 9EA 64Mx8( K4H510838B)
* 18EA 128Mx4( K4H510438B)
* 18EA st.256Mx4( K4H1G0638B)
* 18EA 64Mx8( K4H510838B)
* 9EA 64Mx8( K4H510838B)
* 18EA 128Mx4( K4H510438B)
* 18EA st.256Mx4( K4H1G0638B)
* 18EA
Heihgt 1,700mil 1,700mil 1,700mil 1,700mil 1,200mil 1,200mil 1,200mil 1,200mil
Operating Frequencies
AA(DDR266@CL=2) Speed @CL2 Speed @CL2.5 CL-tRCD-tRP 133MHz 133MHz 2-2-2 A2(DDR266@CL=2) 133MHz 133MHz 2-3-3 B0(DDR266@CL=2.5) 100MHz 133MHz 2.5-3-3 A0(DDR200@CL=2) 100MHz 2-2-2
Feature
• Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V
• Double-d.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | M312L5628BT0-CAA |
Samsung |
DDR SDRAM Registered Module | |
2 | M312L5720BG0-A2 |
Samsung |
DDR SDRAM Registered Module | |
3 | M312L5720BG0-B0 |
Samsung |
DDR SDRAM Registered Module | |
4 | M312L5720BG0-CB3 |
Samsung |
DDR SDRAM Registered Module | |
5 | M312L5720CZ0 |
Samsung Electronics |
DDR SDRAM | |
6 | M312L5720GH3-CB3 |
Samsung |
DDR SDRAM Registered DIMM | |
7 | M312L2828ET0 |
Samsung |
DDR SDRAM Registered Module | |
8 | M312L2920BG0 |
Samsung |
DDR SDRAM Registered Module | |
9 | M312L2920BG0-A2 |
Samsung |
DDR SDRAM Registered Module | |
10 | M312L2920BG0-B0 |
Samsung |
DDR SDRAM Registered Module | |
11 | M312L2920BG0-CB3 |
Samsung |
DDR SDRAM Registered Module | |
12 | M312L2920BT |
Samsung |
DDR SDRAM Registered Module |