M29W640GB Parallel NOR Flash Embedded Memory Datasheet

M29W640GB Parallel NOR Flash Embedded Memory

.. 7 Signal Assignments .. 10 Signal Descriptions ...........

Features

Parallel NOR Flash Embedded Memory M29W640GH, M29W640GL M29W640GT, M29W640GB Features
• Supply voltage
  – VCC = 2.7
  –3.6V (program, erase, read)
  – VPP = 12V for fast program (optional)
• Asynchronous random/page read
  – Page width: 4 words
  – Page access: 25ns
  – Random access: 60ns, 70ns, 90ns
• Fast program commands
  – 2-word/4-byte program (without VPP = 12V)
  – 4-word/8-byte program (with VPP = 12V)
  – 16-word/32-byte write buffer
• Programming time
  – 10µs per byte/word TYP
  – Chip program time: 10 s (4-word program)
  – Double word/quadruple byte program
• Memory organization
  – M29W640GH/L 128 main.

The same part from a different manufacturer

M29W640GB - Numonyx

. . . . 7 2 Signal description.

M29W640GB - STMicroelectronics

. . . . 8 2 Signal descriptions . . . . . . . . .

Related Product

No.	Partie #	Fabricant	Description
1	M29W640GH	Numonyx	64-Mbit 3V supply flash memory
2	M29W640GH	STMicroelectronics	64 Mbit 3V supply Flash memory
3	M29W640GH	Micron	Parallel NOR Flash Embedded Memory
4	M29W640GL	Numonyx	64-Mbit 3V supply flash memory
5	M29W640GL	STMicroelectronics	64 Mbit 3V supply Flash memory
6	M29W640GL	Micron	Parallel NOR Flash Embedded Memory
7	M29W640GT	Numonyx	64-Mbit 3V supply flash memory
8	M29W640GT	STMicroelectronics	64 Mbit 3V supply Flash memory
9	M29W640GT	Micron	Parallel NOR Flash Embedded Memory
10	M29W640D	ST Microelectronics	FLASH NOR HIGH DENSITY & CONSUMER
11	M29W640DB	ST Microelectronics	64 Mbit 8Mb x8 or 4Mb x16 / Boot Block 3V Supply Flash Memory
12	M29W640DT	ST Microelectronics	64 Mbit 8Mb x8 or 4Mb x16 / Boot Block 3V Supply Flash Memory

M29W640GB - Micron