M29F800DT - ST Microelectronics

M29F800DT 8 Mbit (1Mb x8 or 512Kb x16 / Boot Block) 5V Supply Flash Memory

. . . . . 5 Figure 2. Logic Diagram . . . . 5 Table 1. Signal Names . . .

Features

SUMMARY s SUPPLY VOLTAGE s s Figure 1. Packages
  – VCC = 5V ±10% for Program, Erase and Read ACCESS TIME: 55, 70, 90ns PROGRAMMING TIME
  – 10µs per Byte/Word typical 19 MEMORY BLOCKS
  – 1 Boot Block (Top or Bottom Location)
  – 2 Parameter and 16 Main Blocks SO44 (M) s s PROGRAM/ERASE CONTROLLER
  – Embedded Byte/Word Program algorithms ERASE SUSPEND and RESUME MODES
  – Read and Program another Block during Erase Suspend s s UNLOCK BYPASS PROGRAM COMMAND
  – Faster Production/Batch Programming TEMPORARY BLOCK UNPROTECTION MODE COMMON FLASH INTERFACE
  – 64 bit Security Code LOW POWER CONSUMPTION
  –.