FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) s ACCESS TIME: 70, 85, 90,100ns s PROGRAMMING TIME: – 10µs typical – Double Word Programming Option – Quadruple Word Programming Option s COMMON FLASH INTERFACE s MEMORY BLOCKS – Parameter Blocks (Top or Bott.
SUMMARY s SUPPLY VOLTAGE
– VDD = 2.7V to 3.6V Core Power Supply
– VDDQ= 1.65V to 3.6V for Input/Output
– VPP = 12V for fast Program (optional) s ACCESS TIME: 70, 85, 90,100ns s PROGRAMMING TIME:
– 10µs typical
– Double Word Programming Option
– Quadruple Word Programming Option s COMMON FLASH INTERFACE s MEMORY BLOCKS
– Parameter Blocks (Top or Bottom location)
– Main Blocks s BLOCK LOCKING
– All blocks locked at Power Up
– Any combination of blocks can be locked
– WP for Block Lock-Down s SECURITY
– 128 bit user Programmable OTP cells
– 64 bit unique device identifier s AUTOMATIC STAND-BY MOD.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | M28W640ECB |
STMicroelectronics |
64 Mbit 3V Supply Flash Memory | |
2 | M28W640CB |
STMicroelectronics |
64 Mbit 3V Supply Flash Memory | |
3 | M28W640CT |
STMicroelectronics |
64 Mbit 3V Supply Flash Memory | |
4 | M28W640FCB |
ST Microelectronics |
(M28W640FCT / M28W640FCB) Flash memory | |
5 | M28W640FCT |
ST Microelectronics |
(M28W640FCT / M28W640FCB) Flash memory | |
6 | M28W640FSB |
STMicroelectronics |
32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply - Boot Block - Secure Flash Memories | |
7 | M28W640FST |
STMicroelectronics |
32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply - Boot Block - Secure Flash Memories | |
8 | M28W640HCB |
Numonyx |
64 Mbit 3V supply flash memory | |
9 | M28W640HCT |
Numonyx |
64 Mbit 3V supply flash memory | |
10 | M28W160BB |
STMicroelectronics |
16 Mbit 3V Supply Flash Memory | |
11 | M28W160BT |
STMicroelectronics |
16 Mbit 3V Supply Flash Memory | |
12 | M28W160CB |
Numonyx |
16 Mbit 3V Supply Flash Memory |