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M2035S-E3 - Vishay

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M2035S-E3 Schottky Barrier Rectifier

www.vishay.com M2035S-E3, M2045S-E3 Vishay General Semiconductor Schottky Barrier Rectifier TO-220AB 3 2 1 12 3 CASE PRIMARY CHARACTERISTICS IF(AV) 20 A VRRM 35 V, 45 V IFSM VF at IF = 20 A 200 A 0.55 V TJ max. 150 °C Package TO-220AB Diode variations Single die FEATURES • Trench MOS Schottky technology • Power pack • Guardring for overvolt.

Features


• Trench MOS Schottky technology
• Power pack
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Solder dip 275 °C max.10 s, per JESD 22-B106
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters, or polarity protection application. MECHANICAL DATA Case: TO-220AB Molding compound meets UL 94 V-0 flammabi.

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