M1MA152WKT1 - Motorola Inc

M1MA152WKT1 Common Cathode Silicon Dual Switching Diodes

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by M1MA151WKT1/D Common Cathode Silicon Dual Switching Diodes These Common Cathode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC–59 package which is designed for low power surface mount applications. • Fast t.

Features

c CASE 318D
  –03, STYLE 3 SC
  –59 Vdc mAdc mAdc mAdc THERMAL CHARACTERISTICS Rating Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 200 150
  – 55 to + 150 Unit mW °C °C ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Reverse Voltage Leakage Current M1MA151WKT1 M1MA152WKT1 Forward Voltage Reverse Breakdown Voltage M1MA151WKT1 M1MA152WKT1 Diode Capacitance Reverse Recovery Time 1. t = 1 SEC 2. trr Test Circuit Thermal Clad is a trademark of the Bergquist Company Preferred devices are Motorola recommended choices for future use and best overall value. Sym.