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The M12L128168A is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits. Synchronous design allow.
JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency ( 2 & 3 ) - Burst Length ( 1, 2, 4, 8 & full page ) - Burst Type ( Sequential & Interleave ) All inputs are sampled at the positive going edge of the system clock Burst Read single write operation DQM for masking Auto & self refresh 64ms refresh period (4K cycle) M12L128168A (2S) 2M x 16 Bit x 4 Banks Synchronous DRAM ORDERING INFORMATION Product ID M12L128168A-5TG2S M12L128168A-5BG2S M12L128168A-6TG2S M12L128168A-6BG2S M12L128168A-7TG2S M12L12816.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | M12L128168A-7TG2N |
ESMT |
2M x 16 Bit x 4 Banks Synchronous DRAM |
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| 2 | M12L128168A-7TG |
ESMT |
2M x 16 Bit x 4 Banks Synchronous DRAM |
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| 3 | M12L128168A-7TVAG2S |
ESMT |
2M x 16 Bit x 4 Banks Synchronous DRAM |
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| 4 | M12L128168A-7TVG2S |
ESMT |
2M x 16 Bit x 4 Banks Synchronous DRAM |
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| 5 | M12L128168A-7BG |
ESMT |
2M x 16 Bit x 4 Banks Synchronous DRAM |
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| 6 | M12L128168A-7BG2N |
ESMT |
2M x 16 Bit x 4 Banks Synchronous DRAM |
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| 7 | M12L128168A-7BG2S |
ESMT |
2M x 16 Bit x 4 Banks Synchronous DRAM |
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| 8 | M12L128168A-7BVAG2S |
ESMT |
2M x 16 Bit x 4 Banks Synchronous DRAM |
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| 9 | M12L128168A-7BVG2S |
ESMT |
2M x 16 Bit x 4 Banks Synchronous DRAM |
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| 10 | M12L128168A-5BG |
ESMT |
2M x 16 Bit x 4 Banks Synchronous DRAM |
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| 11 | M12L128168A-5BG2N |
ESMT |
2M x 16 Bit x 4 Banks Synchronous DRAM |
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| 12 | M12L128168A-5BG2S |
ESMT |
2M x 16 Bit x 4 Banks Synchronous DRAM |
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