-..... enhancement-type --:IE () n-channel MOSFET :IE designed for • • • • General Purpose Amplifiers • Analog Switches • Digital Switching H Performance Curves MBN MBNA See Section 4 BENEFITS • High Input Impedance 1 pA Maximum (Ml17) • Low Insertion Loss RDS(on) = 100 n Maximum • Rugged Zener Diode Input Protection ABSOLUTE MAXIMUM RATINGS (25°C) Dr.
CAL CHARACTERISTICS (25°C unless otherwise noted) Characteristic 1 12" 1"3 I-S 4T ISA 1ST 1-::- I 7C Is 1- 9 110 IGSS Gate-Body Leakage VGS(th) Gate Threshold Voltage BVOSS Drain-Source Breakdown Voltage BVSOS Source-Drain Breakdown Voltage BVGBS Gate-Body Breakdown Voltage 1010ff) Drain Cutoff Current ISlo111 Source Cutoff Current 10(on) ON Orai n Current rOS(on) Drain Source ON Resistance 11 Ciss 1""12 0 Cgs 11"3 Y _N Cgd 14 Cdb Input Capacitance Gate-Source Capacitance Gate-Drain Capacitance Drain-Body Capacitance M116 Min Max 100 1 5 30 30 30 60 10 10 2 20 100 20.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | M1102NC500 |
IXYS |
Fast Recovery Diode | |
2 | M1102NC520 |
IXYS |
Fast Recovery Diode | |
3 | M1102NC540 |
IXYS |
Fast Recovery Diode | |
4 | M1102NC560 |
IXYS |
Fast Recovery Diode | |
5 | M1102NC580 |
IXYS |
Fast Recovery Diode | |
6 | M1102NC600 |
IXYS |
Fast Recovery Diode | |
7 | M1104NC400 |
IXYS |
Fast Recovery Diode | |
8 | M1104NC420 |
IXYS |
Fast Recovery Diode | |
9 | M1104NC440 |
IXYS |
Fast Recovery Diode | |
10 | M1104NC450 |
IXYS |
Fast Recovery Diode | |
11 | M1105 |
Nippon Precision Circuits Inc |
Melody IC | |
12 | M1106 |
Nippon Precision Circuits Inc |
Melody IC |