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CORPORATION Diode Protected N-Channel Enhancement Mode MOSFET General Purpose Amplifier M116 FEATURES • Low IGSS • Integrated Zener Clamp for Gate Protection PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Drain to Source Voltage. . . . . . . . . 30V Gate to Drain Voltage . . . . . . ..
• Low IGSS
• Integrated Zener Clamp for Gate Protection
PIN CONFIGURATION
ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Gate to Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Gate Zener Current . . . . . . . . . . . . . . . . . . . . . . . . . . . ±0.1mA Storage Temperature Range . . . . . . . . . . . . . -65oC to +200oC Operating Temperature Range . . . . . . . . . . . -55oC to +125o.
M116 - Siliconix
-..... enhancement-type --:IE () n-channel MOSFET :IE designed for • • • • General Purpose Amplifiers • Analog Swit.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | M1102NC500 |
IXYS |
Fast Recovery Diode |
|
| 2 | M1102NC520 |
IXYS |
Fast Recovery Diode |
|
| 3 | M1102NC540 |
IXYS |
Fast Recovery Diode |
|
| 4 | M1102NC560 |
IXYS |
Fast Recovery Diode |
|
| 5 | M1102NC580 |
IXYS |
Fast Recovery Diode |
|
| 6 | M1102NC600 |
IXYS |
Fast Recovery Diode |
|
| 7 | M1104NC400 |
IXYS |
Fast Recovery Diode |
|
| 8 | M1104NC420 |
IXYS |
Fast Recovery Diode |
|
| 9 | M1104NC440 |
IXYS |
Fast Recovery Diode |
|
| 10 | M1104NC450 |
IXYS |
Fast Recovery Diode |
|
| 11 | M1105 |
Nippon Precision Circuits Inc |
Melody IC |
|
| 12 | M1106 |
Nippon Precision Circuits Inc |
Melody IC |
|