enhancement-type H p-channel MOSFET designed for • • • Performance Curves MBH See Section 4 • General Purpose Amplifiers • Analog Switches • Digital Switching BENEFITS • High Gain 9fs = 4000 I'mho Typical • High Input Impedance IGSS = 6 pA Typical • High Off-Isolation ID(off) = 15 pA Typical • Rugged Zener Protected Input ABSOLUTE MAXIMUM RATINGS (25°.
acteristic Min TVp Max Unit Test Conditions I,1 1"2 1- 4S 15 T BVOSS BVSDS BVGBS IGSS 10(0ft) SA 'Stoff) "1T I VGS(thl -I i C 1010n) -9 10 rOSlen) 11 12 VOS(on) 1413 0 Sis y Cg, 15 N Cgd 1& A M Cob 17 I Cdb 18 C Cd, ~S tcilon) -20 W t, 21 'off Drain-Source Breakdown Voltage -40 Source-Drain Breakdown Voltage -40 Gate-Body Breakdown Voltage -40 Gate-Body Leakage ~ Drain Cutoff Current -15 Source Cutoff Current -16 Gate Threshold Voltage -1.5 -2.9 Drain Current -1l -20 10 Drain-Source ON Resistance 100 320 Orain- Source ON Voltage Common-5ource Forward Tra.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | M1102NC500 |
IXYS |
Fast Recovery Diode | |
2 | M1102NC520 |
IXYS |
Fast Recovery Diode | |
3 | M1102NC540 |
IXYS |
Fast Recovery Diode | |
4 | M1102NC560 |
IXYS |
Fast Recovery Diode | |
5 | M1102NC580 |
IXYS |
Fast Recovery Diode | |
6 | M1102NC600 |
IXYS |
Fast Recovery Diode | |
7 | M1104NC400 |
IXYS |
Fast Recovery Diode | |
8 | M1104NC420 |
IXYS |
Fast Recovery Diode | |
9 | M1104NC440 |
IXYS |
Fast Recovery Diode | |
10 | M1104NC450 |
IXYS |
Fast Recovery Diode | |
11 | M1105 |
Nippon Precision Circuits Inc |
Melody IC | |
12 | M1106 |
Nippon Precision Circuits Inc |
Melody IC |