--C'? s enhancement-type p-channel MOSFET H designed for • • • Performance Curves MBL See Section 4 Analog Switches •• Digital Switching BENEFITS • High Off-Isolation ID(off) < 200 pA IS(off) < 200 pA • Rugged Zener Diode Input Protection ABSOLUTE MAXIMUM RATINGS (25°C) Drain-to-Source Voltage ......••.............. -30 V Gate-to-Source Voltage -30V •.
14
BVOSS BVSOS BVGBS IGSS 10(off} IS(off} VGS(th}
rDS(on)
Cg, Cod C,b Cdb
Cd,
Drain-Source Breakdown Voltage Source-Drain Breakdown Voltage Gate-Body Breakdown Voltage Gate-Body Leakage Drain Cutoff Current Source Cutoff Current Gate Threshold Voltage
Drain Source ON Resistance
Gate-Source Capacitance Gate-Drain Capacitance Source
·Body Capacitance Drain-Body Capacitance
Drain-Source Capacitance
Min
Max
Unit
-30
-30
V
-30
-90
-100
-200
pA
-200
-1
-3
V
400
n
200
4
4
5
pF
5
0.3
Telt Conditions
10 = -1 ~A. VGS = VBS = 0 IS = -1 ~A, VGO = VBO = 0 IG= -10IlA, VSB = VOB - .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | M1102NC500 |
IXYS |
Fast Recovery Diode | |
2 | M1102NC520 |
IXYS |
Fast Recovery Diode | |
3 | M1102NC540 |
IXYS |
Fast Recovery Diode | |
4 | M1102NC560 |
IXYS |
Fast Recovery Diode | |
5 | M1102NC580 |
IXYS |
Fast Recovery Diode | |
6 | M1102NC600 |
IXYS |
Fast Recovery Diode | |
7 | M1104NC400 |
IXYS |
Fast Recovery Diode | |
8 | M1104NC420 |
IXYS |
Fast Recovery Diode | |
9 | M1104NC440 |
IXYS |
Fast Recovery Diode | |
10 | M1104NC450 |
IXYS |
Fast Recovery Diode | |
11 | M1105 |
Nippon Precision Circuits Inc |
Melody IC | |
12 | M1106 |
Nippon Precision Circuits Inc |
Melody IC |