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The LTE-4238 series and LTE-5238A series are high intensity Gallium Aluminum Arsenide infrared emitting diodes mounted in clear plastic end looking packages. Gallium Aluminum Arsenide features a significant increase in the radiated output of Gallium Arsenide at the same forward current. Also with a wavelength centered at 880nanometers it more closely of sili.
Selected to specific on-line intensity and radiant intensity ranges. High power out put. Mechanically and spectrally matched to the LTR-3208 series of phototransistor. Wavelength is 880nm. Package Dimensions LTE-4238/LTE-4238C Description The LTE-4238 series and LTE-5238A series are high intensity Gallium Aluminum Arsenide infrared emitting diodes mounted in clear plastic end looking packages. Gallium Aluminum Arsenide features a significant increase in the radiated output of Gallium Arsenide at the same forward current. Also with a wavelength centered at 880nanometers it more closely of sil.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | LTE-5238A |
LITE-ON Electronics |
(LTE-x238x) LAMP |
|
| 2 | LTE-5208A |
LITE-ON Electronics |
LAMP |
|
| 3 | LTE-5228A |
LITE-ON Electronics |
LED Lamp |
|
| 4 | LTE-5228AB |
LITE-ON Electronics |
LED Lamp |
|
| 5 | LTE-1650 |
Lite-On Technology |
Property of Lite-On Only |
|
| 6 | LTE-1653K |
Lite-On Technology |
Property of Lite-On Only |
|
| 7 | LTE-209 |
Lite-On Technology |
Property of Lite-On Only |
|
| 8 | LTE-239 |
Lite-On Technology |
Property of Lite-On Only |
|
| 9 | LTE-2871 |
Lite-On Technology |
Gaalas T-1 3/4 Modified Infrared Emitting Diode |
|
| 10 | LTE-2872U |
Lite-On Technology |
Property of Lite-On Only |
|
| 11 | LTE-302 |
Lite-On Technology |
IR Emitter/Detector |
|
| 12 | LTE-304 |
Lite-On Technology |
Property of Lite-On Only |
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