The LTE-4238 series and LTE-5238A series are high intensity Gallium Aluminum Arsenide infrared emitting diodes mounted in clear plastic end looking packages. Gallium Aluminum Arsenide features a significant increase in the radiated output of Gallium Arsenide at the same forward current. Also with a wavelength centered at 880nanometers it more closely of sili.
Selected to specific on-line intensity and radiant intensity ranges. High power out put. Mechanically and spectrally matched to the LTR-3208 series of phototransistor. Wavelength is 880nm. Package Dimensions LTE-4238/LTE-4238C Description The LTE-4238 series and LTE-5238A series are high intensity Gallium Aluminum Arsenide infrared emitting diodes mounted in clear plastic end looking packages. Gallium Aluminum Arsenide features a significant increase in the radiated output of Gallium Arsenide at the same forward current. Also with a wavelength centered at 880nanometers it more closely of sil.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | LTE-4238 |
LITE-ON Electronics |
(LTE-x238x) LAMP | |
2 | LTE-4206 |
Lite-On Technology |
GaAlAs T-1 Standard 3 Infrared Emitting Diode | |
3 | LTE-4206C |
Lite-On Technology |
GaAlAs T-1 Standard 3 Infrared Emitting Diode | |
4 | LTE-4208 |
Lite-On Technology Corporation |
CLEAR TRANSPARENT COLOR PACKAGE | |
5 | LTE-4208C |
Lite-On Technology Corporation |
GaAs T-1 3/4 Standard Infrared Emitting Diode | |
6 | LTE-4216 |
Lite-On Technology |
GaAlAs T-1 Standard 3 Infrared Emitting Diode | |
7 | LTE-4216C |
Lite-On Technology |
GaAlAs T-1 Standard 3 Infrared Emitting Diode | |
8 | LTE-1650 |
Lite-On Technology |
Property of Lite-On Only | |
9 | LTE-1653K |
Lite-On Technology |
Property of Lite-On Only | |
10 | LTE-209 |
Lite-On Technology |
Property of Lite-On Only | |
11 | LTE-239 |
Lite-On Technology |
Property of Lite-On Only | |
12 | LTE-2871 |
Lite-On Technology |
Gaalas T-1 3/4 Modified Infrared Emitting Diode |