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The LTE-3271T/LTE-3371T/LTE-3217TL/LTE-3371TL are high intensity Gallium Aluminum Arsenide infrared emitting diodes mounted in plastic end looking packages. They provide a broad range of intensity selection and are specified under pulsed drive up to 2 Amps. Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is 0.25mm (.010") unless otherwise.
Special for high current and low forward voltage. High power. Available for pulse operating. Wide viewing angle. LTE-3271TL/LTE-3371TL are blue transparent color package. Package Dimensions Description The LTE-3271T/LTE-3371T/LTE-3217TL/LTE-3371TL are high intensity Gallium Aluminum Arsenide infrared emitting diodes mounted in plastic end looking packages. They provide a broad range of intensity selection and are specified under pulsed drive up to 2 Amps. Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is 0.25mm (.010") unless otherwise noted. 3. Protruded resin under fla.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | LTE-3271T |
Lite-On Technology |
GaAlAs T-1 3/4 Standard 5 Infrared Emitting Diode |
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| 2 | LTE-3271A |
Lite-On Technology |
Property of Lite-On Only |
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| 3 | LTE-3276 |
Lite-On Technology |
Property of Lite-On Only |
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| 4 | LTE-3277 |
Lite-On Technology |
Property of Lite-On Only |
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| 5 | LTE-3279K |
Lite-On Technology |
Property of Lite-On Only |
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| 6 | LTE-322-M |
Lite-On Technology |
Property of Lite-On Only |
|
| 7 | LTE-302 |
Lite-On Technology |
IR Emitter/Detector |
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| 8 | LTE-304 |
Lite-On Technology |
Property of Lite-On Only |
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| 9 | LTE-306 |
Lite-On Technology |
Property of Lite-On Only |
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| 10 | LTE-309 |
Lite-On Technology |
Property of Lite-On Only |
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| 11 | LTE-3371T |
Lite-On Technology |
GaAlAs T-1 3/4 Standard 5 Infrared Emitting Diode |
|
| 12 | LTE-3371TL |
Lite-On Technology |
GaAlAs T-1 3/4 Standard 5 Infrared Emitting Diode |
|