LSD07N70 - Lonten

LSD07N70 N-channel MOSFET

LonFETTM Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency. Product Summary VDS @ Tj,max 750V RDS(on),max 0.57Ω IDM 21A Qg,typ 19nC Features  Ultra low Rdson  Ultra.

Features

 Ultra low Rdson  Ultra low gate charge (typ. Qg = 19nC)  100% UIS tested  RoHS compliant Applications  Power faction correction (PFC).  Switched mode power supplies (SMPS).  Uninterruptible power supply (UPS). TO-251 TO-252 TO-220 TO-220F D G S N-Channel MOSFET Pb Absolute Maximum Ratings Parameter Drain-Source Voltage Continuous drain current Pulsed drain current 1) ( TC = 25°C ) ( TC = 100°C ) Gate-Source voltage Avalanche energy, single pulse 2) Avalanche energy, repetitive 1) Avalanche current, repetitive 1) Power Dissipation ( TC = 25°C ) - Derate above 25°C Operat.