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LMS1503-VB LMS1503-VB Datasheet N-Channel 30 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () 0.023 at VGS = 10 V 30 0.027 at VGS = 4.5 V ID (A)a, e 6 6 Qg (Typ.) 4.2 nC TSOP-6 D1 D2 6D 5D G3 4S FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Low On-Resistance • 100 % Rg Tested • Compl.
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Low On-Resistance
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• DC/DC Converters, High Speed Switching
Top View
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 300 µs)
VDS
VGS
TC = 25 °C
TC = 70 °C TA = 25 °C
ID
TA = 70 °C
IDM
30
± 20 6e 6e 5.5b, c 4.4b, c 25
Continuous Source-Drain Diode Current
TC = 25 °C TA = 25 °C
TC = 25 °C.
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