LM8050J - ON Semiconductor

LM8050J Amplifier Transistors

LM8050I, LM8050J Amplifier Transistors NPN Silicon MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current – Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS C.

Features

lication Order Number: LM8050I/D LM8050I, LM8050J ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector
  –Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 25
  –
  – Vdc Collector
  –Base Breakdown Voltage (IC = 0.5 mAdc, IE = 0) Emitter
  –Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Collector Cutoff Current (VCB = 15 Vdc, IE = 0) V(BR)CBO 30
  –
  – Vdc V(BR)EBO 6.0
  –
  – Vdc ICBO
  –
  – 50 nAdc ON CHARACTERISTICS DC Current Gain (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 350 mAdc, VCE = 1.0 Vdc) Collector
  –Emitter Saturation .