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LM5110 - Texas Instruments

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LM5110 Dual 5-A Compound Gate Driver

The LM5110 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each “compound” output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current v.

Features


•1 Independently Drives Two N-Channel MOSFETs
• Compound CMOS and Bipolar Outputs Reduce Output Current Variation
• 5A sink/3A Source Current Capability
• Two Channels can be Connected in Parallel to Double the Drive Current
• Independent Inputs (TTL Compatible)
• Fast Propagation Times (25-ns Typical)
• Fast Rise and Fall Times (14-ns/12-ns Rise/Fall With 2-nF Load)
• Dedicated Input Ground Pin (IN_REF) for Split Supply or Single Supply Operation
• Outputs Swing from VCC to VEE Which Can Be Negative Relative to Input Ground
• Available in Dual Noninverting, Dual Inverting and Combination Conf.

The same part from a different manufacturer

Datasheet LM5110 - National Semiconductor LM5110

The LM5110 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Ea.

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