............. 4 Memory Map .. 5 Identifier Codes and OTP Address for Read Operation 6 OTP Block Address Map for OTP Program 7 PAGE 1 Electrical Specifications .....
• Individual Block Lock and Block Lock-Down with Zero-Latency
• All blocks are locked at power-up or device reset.
• Block Erase, Full Chip Erase, Word Program Lockout during Power Transitions Automated Erase/Program Algorithms
• 3.0V Low-Power 10µs/Word (Typ.) Programming
• 12.0V No Glue Logic 9µs/Word (Typ.) Production Programming and 0.8s Erase (Typ.) Cross-Compatible Command Support
• Basic Command Set
• Common Flash Interface (CFI) Extended Cycling Capability
• Minimum 100,000 Block Erase Cycles 0.8mm pitch 48-Ball CSP ETOXTM
* Flash Technology Not designed or rated as radiatio.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | LHF00L08 |
Sharp Microelectronics |
Flash Memory 32M (2MB x 16) | |
2 | LHF00L10 |
Sharp Microelectronics |
Flash Memory 32M (2MB x 16) | |
3 | LHF00L11 |
Sharp Microelectronics |
Flash Memory 32M (2MB x 16) | |
4 | LHF00L12 |
Sharp Microelectronics |
Flash Memory 32M (2MB x 16) | |
5 | LHF00L13 |
Sharp Microelectronics |
Flash Memory 32M (2MB x 16) | |
6 | LHF00L14 |
Sharp Microelectronics |
Flash Memory 32M (2MB x 16) | |
7 | LHF00L28 |
Sharp Microelectronics |
Flash Memory 16M (1Mb x 16) | |
8 | LHF00L29 |
Sharp Microelectronics |
Flash Memory 16M (1Mb x 16) | |
9 | LHF00L31 |
Sharp Microelectronics |
Flash Memory 16M (1Mb x 16) | |
10 | LHF04C01 |
Sharp Electrionic Components |
4M Flash File Memory | |
11 | LHF04C10 |
Sharp Electrionic Components |
4Mbit Flash Memory | |
12 | LHF08CH2 |
Sharp Electrionic Components |
Flash Memory 8M (1M bb8) |