The LH28F800BG-L/BGH-L flash memories with SmartVoltage technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. The LH28F800BG-L/BGH-L can operate at VCC = 2.7 V and VPP = 2.7 V. Their low voltage operation capability realizes longer battery life and suits for cellular phone application. Their boot, p.
• SmartVoltage technology
– 2.7 V, 3.3 V or 5 V VCC
– 2.7 V, 3.3 V, 5 V or 12 V VPP
• High performance read access time LH28F800BG-L85/BGH-L85
– 85 ns (5.0±0.25 V)/90 ns (5.0±0.5 V)/ 100 ns (3.3±0.3 V)/120 ns (2.7 to 3.6 V) LH28F800BG-L12/BGH-L12
– 120 ns (5.0±0.5 V)/130 ns (3.3±0.3 V)/ 150 ns (2.7 to 3.6 V)
• Enhanced automated suspend options
– Word write suspend to read
– Block erase suspend to word write
– Block erase suspend to read
• Enhanced data protection features
– Absolute protection with VPP = GND
– Block erase/word write lockout during power transitions
– Boot blocks protection w.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | LH28F800BGH-L |
Sharp Electrionic Components |
8 M-bit (512 kB x 16) SmartVoltage Flash Memories | |
2 | LH28F800BJB-PTTL10 |
Sharp Electrionic |
8M (x8/x16) Flash Memory | |
3 | LH28F800BJB-PTTL90 |
Sharp Electrionic |
8M (x8/x16) Flash Memory | |
4 | LH28F800BJE-PBTL70 |
Sharp Electrionic |
8M (x8/x16) Flash Memory | |
5 | LH28F800BJE-PBTL90 |
Sharp Electrionic |
8M (x8/x16) Flash Memory | |
6 | LH28F800BJE-PTTL90 |
Sharp Electrionic |
Flash Memory 8M | |
7 | LH28F800BJE-PTTLZ1 |
Sharp Electrionic |
8M (x8/x16) Flash Memory | |
8 | LH28F800BJHB-43 |
Sharp Electrionic |
8M (x8/x16) Flash Memory | |
9 | LH28F800BJHB-PTTL90 |
Sharp Electrionic |
8M (x8/x16) Flash Memory | |
10 | LH28F800BJHE-PBTL90 |
Sharp Electrionic |
8M (x8/x16) Flash Memory | |
11 | LH28F800BJHE-PBTLT9 |
Sharp Microelectronics |
Flash Memory 8Mbit (1Mbitx8) | |
12 | LH28F800BJHE-PTTL90 |
Sharp Electrionic |
8M (x8/x16) Flash Memory |