............. 4 Simultaneous Operation Modes Allowed with Four Planes .... 5 Memory Map .. 6 PAGE Extended Status Register Definition .......... 15 Partition Configuration Register Definition.............. 16 .
• Individual Block Lock and Block Lock-Down with Zero-Latency
• All blocks are locked at power-up or device reset.
• Absolute Protection with VPP≤VPPLK
• Block Erase, Full Chip Erase, (Page Buffer) Word Program Lockout during Power Transitions Automated Erase/Program Algorithms
• 3.0V Low-Power 11µs/Word (Typ.) Programming
• 12V No Glue Logic 9µs/Word (Typ.) Production Programming and 0.5s Erase (Typ.) Cross-Compatible Command Support
• Basic Command Set
• Common Flash Interface (CFI) Extended Cycling Capability
• Minimum 100,000 Block Erase Cycles 0.75mm pitch 48-Ball CSP (7mm×7mm) ETOXTM
* Fl.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | LH28F320BFHG-PBTLZN |
Sharp Electrionic |
32M (x16) Flash Memory | |
2 | LH28F320BFHG-PTTLZK |
Sharp Electrionic |
32M (x16) Flash Memory | |
3 | LH28F320BFHG-PTTLZM |
Sharp Electrionic |
32M (x16) Flash Memory | |
4 | LH28F320BFHB-PBTL60 |
Sharp Electrionic |
32M (x16) Flash Memory | |
5 | LH28F320BFHE-PBTL60 |
Sharp Electrionic |
32M (x16) Flash Memory | |
6 | LH28F320BFHE-PBTLEZ |
Sharp Microelectronics |
Flash Memory 32Mbit (2Mbitx16) | |
7 | LH28F320BFHE-PBTLF1 |
Sharp Microelectronics |
Flash Memory 32Mbit (2Mbitx16) | |
8 | LH28F320BFHE-PBTLZ2 |
Sharp Electrionic |
32M (x16) Flash Memory | |
9 | LH28F320BFHE-PTTL60 |
Sharp Electrionic |
32M (x16) Flash Memory | |
10 | LH28F320BFHE-PTTLZ1 |
Sharp Electrionic |
32M (x16) Flash Memory | |
11 | LH28F320BF |
Sharp |
(LH28FxxxBF) Page Mode Dual Work Flash Memory | |
12 | LH28F320BFB-PBTL60 |
Sharp Electrionic |
32M (x16) Flash Memory |