LH28F160S5H-L - Sharp Electrionic Components

LH28F160S5H-L 16 M-bit (2 MB x 8/1 MB x 16) Smart 5 Flash Memories (Fast Programming)

The LH28F160S5-L/S5H-L flash memories with Smart 5 technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications, having high programming performance is achieved through highly-optimized page buffer operations. Their symmetrically-blocked architecture, flexible voltage and enhanced cycling capability provide.

Features

  – Absolute protection with VPP = GND
  – Flexible block locking
  – Erase/write lockout during power transitions
• SRAM-compatible write interface
• User-configurable x8 or x16 operation
• High-density symmetrically-blocked architecture
  – Thirty-two 64 k-byte erasable blocks
• Enhanced cycling capability
  – 100 000 block erase cycles
  – 3.2 million block erase cycles/chip
• Low power management
  – Deep power-down mode
  – Automatic power saving mode decreases ICC in static mode
• Automated write and erase
  – Command user interface
  – Status register
• ETOXTM∗ V nonvolatile flash technology
• Packages
  – 5.