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LE2416DXA - ON Semiconductor

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LE2416DXA EEPROM

A1 SCL A2 WP A3 VCC B1 SDA B2 GND B3 TEST Serial clock input Write protect Power supply Serial data in/output Ground Slave Device Address 2 Block Diagram TEST WP SCL Write controller High voltage generator EEPROM Array Serial controller X decoder SDA Serial-Parallel converter www.onsemi.com 6 Bus timing SCL SDA/IN SDA/OUT LE2416DXA tF tHIGH tLO.

Features

pin B3 (TEST)
 Erase/Write cycles : 106 cycles (Page Write)
 Data Retention : 20 years
 High reliability : Adopts proprietary symmetric memory array configuration (USP6947325) Hardware write protect feature Noise filters connected to SCL and SDA pins Incorporates a feature to prohibit write operations under low voltage conditions.
 Package : LE2416DXA WLP6(0.801.20) 0.33 mm height Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Supply voltage DC input voltage Over-shoot voltage Storage temperature Tstg Conditions Ratings 0.5 to +4.6 0.5 to VCC+0..

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