LDTC115EM3T5G - LRC

LDTC115EM3T5G Bias Resistor Transistors

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors NPN Silicon Surface Mount Transistors LDTC114EM3T5G Series With Monolithic Bias Resistor Network S-LDTC114EM3T5G Series This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor .

Features

Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. PIN 1 BASE (INPUT) R1 R2 MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PIN 3 COLLECTOR (OUTPUT) PIN 2 EMITTER (GROUND) Rating Symbol Value Unit Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Collector Current IC THERMAL CHARACTERISTICS Characteristic Symbol 50 50 100 Max Vdc Vdc mAdc Unit MARKING DIAGRAM 3 XX M Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance
  – Junction-to-Ambient PD RθJA 260 (Note 1) 600 (Note 2) 2.0 (Note 1) 4.8 (Note 2) .