LDTA114EM3T5G - LRC

LDTA114EM3T5G Bias Resistor Transistors

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors PNP Silicon Surface Mount Transistors With Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two.

Features

tter Voltage VCEO Collector Current IC THERMAL CHARACTERISTICS 50 50 100 Characteristic Symbol Max Total Device Dissipation TA = 25°C Derate above 25°C PD 260 (Note 1) 600 (Note 2) 2.0 (Note 1) 4.8 (Note 2) Thermal Resistance
  – Junction-to-Ambient RθJA 480 (Note 1) 205 (Note 2) Junction and Storage Temperature Range TJ, Tstg
  –55 to +150 1. FR
  –4 @ Minimum Pad 2. FR
  –4 @ 1.0 x 1.0 inch Pad Unit Vdc Vdc mAdc Unit mW mW/°C °C/W °C LDTA114EM3T5G Series 3 1 SOT-723 2 PIN 1 BASE (INPUT) R1 R2 PIN 3 COLLECTOR (OUTPUT) PIN 2 EMITTER (GROUND) MARKING DIAGRAM 3 XX M 12 xx = Specifi.