Ordering number: EN 4484B CMOS LSI LC3564RM,RT-10LV/12LV/15LV 64K (8192 words × 8 bits) SRAM Overview The LC3564RM,RT are 8192-word × 8bit, asynchronous, silicon gate, low-voltage CMOS SRAM LSIs.They operate from a 2.0 to 3.6V supply, making them ideal for handheld, battery-operated equipment. They are fully CMOS devices employing 2-layer A1 wiring to rea.
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Supply voltage range: 2.0 to 3.6V
• 3V operation: 2.7 to 3.6V
• Battery operation: 2.0 to 2.4V
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High-speed access time
• 3V operation - LC3564RM,RT-10LV: 100ns (max) - LC3564RM,RT-12LV: 120ns (max) - LC3564RM,RT-15LV: 150ns (max)
• Battery operation - LC3564RM,RT-10LV: 200ns (max) - LC3564RM,RT-12LV: 250ns (max) - LC3564RM,RT-15LV: 300ns (max)
unit: mm
3221 - TSOP28
[LC3564RT]
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Very-low standby current
• 3V operation - Ta ≤ 70°C: 1.0µA - Ta ≤ 85°C: 3.0µA
• Battery operation - Ta ≤ 70°C: 0.85µA - Ta ≤ 85°C: 2.5µA
s s s s
Operating temperature range:
–40 to +85°C Data retention suppl.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | LC3564RT-10LV |
Sanyo |
64K (8192 words x 8 bits) SRAM | |
2 | LC3564RT-15LV |
Sanyo |
64K (8192 words x 8 bits) SRAM | |
3 | LC3564RM |
Sanyo |
64K (8192 words x 8 bits) SRAM | |
4 | LC3564B |
Sanyo |
64K (8192-word 8-bit) SRAM | |
5 | LC3564BM |
Sanyo |
64K (8192-word 8-bit) SRAM | |
6 | LC3564BS |
Sanyo |
64K (8192-word 8-bit) SRAM | |
7 | LC3564BT |
Sanyo |
64K (8192-word 8-bit) SRAM | |
8 | LC3564BT-10 |
Sanyo |
64K (8192-word 8-bit) SRAM | |
9 | LC3564BT-70 |
Sanyo |
64K (8192-word 8-bit) SRAM | |
10 | LC3564S |
Sanyo |
64K (8192 words x 8 bits) SRAM | |
11 | LC3564SM |
Sanyo |
64K (8192 words x 8 bits) SRAM | |
12 | LC3564SS |
Sanyo |
64K (8192 words x 8 bits) SRAM |