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Features • Ultra low leakage: nA level • Ultra low operating voltage: 3.3V • Ultra low clamping voltage • Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±25kV Contact discharge: ±15kV – IEC61000-4-4 (EFT) 40A (5/50ns) – IEC61000-4-5 (Lightning) 25A (8/20µs) Applications • Analog Video • RJ-45 Connectors • T1/E1 Secondar.
• Ultra low leakage: nA level
• Ultra low operating voltage: 3.3V
• Ultra low clamping voltage
• Complies with following standards:
– IEC 61000-4-2 (ESD) immunity test Air discharge: ±25kV Contact discharge: ±15kV
– IEC61000-4-4 (EFT) 40A (5/50ns)
– IEC61000-4-5 (Lightning) 25A (8/20µs)
Applications
• Analog Video
• RJ-45 Connectors
• T1/E1 Secondary Protection
• T3/E3 Secondary Protection
• 10/100/1000 Ethernet
LC3304P8
4-Line 3.3V ESD Protection Diode Array
Dimensions DFN2626-10
2.60 1 23 45
2.60
10 9 8 7 6 0.50 BSC
0.55
Pin Configuration
Pin 5
Pin 1
Pin 9
Pin 3
Pin 7
Mechanical Char.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | LC3304EP8 |
Leiditech |
LOW CAPACITANCE TVS DIODE ARRAY |
|
| 2 | LC3304EP8 |
UN Semiconducctor |
Transient Voltage Suppressors |
|
| 3 | LC3300 |
Leadchip semi |
Variable Frequency Step-up DC/DC Converter |
|
| 4 | LC3301CW |
Leiditech |
LOW CAPACITANCE TVS DIODE |
|
| 5 | LC33 |
Microsemi |
1500 Watt Low Capacitance Transient Voltage Suppressor |
|
| 6 | LC3311CCW |
Leiditech |
LOW CAPACITANCE TVS DIODE |
|
| 7 | LC331632M-10 |
Sanyo |
512K (32768 words X 16 bits) Pseudo-SRAM |
|
| 8 | LC331632M-12 |
Sanyo |
512K (32768 words X 16 bits) Pseudo-SRAM |
|
| 9 | LC331632M-70 |
Sanyo |
512K (32768 words X 16 bits) Pseudo-SRAM |
|
| 10 | LC331632M-80 |
Sanyo |
512K (32768 words X 16 bits) Pseudo-SRAM |
|
| 11 | LC3374N |
Leiditech |
4-Line TVS |
|
| 12 | LC338128M |
Sanyo |
1MEG (131072 WORDS X 8BITS) PSEUDO-SRAM |
|