NPN low VCEsat transistor in a SOT23 plastic package. PNP complement: LBSS5240LT1G . ORDERING INFORMATION Device LBSS4240LT1G S-LBSS4240LT1G Marking ZE LBSS4240LT3G ZE S-LBSS4240LT3G Shipping 3000/Tape & Reel 10000/Tape & Reel LBSS4240LT1G S-LBSS4240LT1G 3 1 2 SOT– 23 COLLECTOR 3 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Collector–Emitter Voltage C.
• Low collector-emitter saturation voltage
• High current capability
• Improved device reliability due to reduced heat generation
• Replacement for SOT89/SOT223 standard packaged transistors.
• We declare that the material of product compliance with RoHS requirements.
• S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
APPLICATIONS
• Supply line switching circuits
• Battery management applications
• DC/DC converter applications
• Strobe flash units
• Heavy duty battery powered equipment (motor and lamp dr.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | LBSS123LT1G |
Leshan Radio Company |
N-CHANNEL POWER MOSFET | |
2 | LBSS123LT3G |
Leshan Radio Company |
N-CHANNEL POWER MOSFET | |
3 | LBSS138DW1T1G |
LRC |
Power MOSFET | |
4 | LBSS138LT1G |
Leshan Radio Company |
Power MOSFET | |
5 | LBSS138LT3G |
Leshan Radio Company |
Power MOSFET | |
6 | LBSS138V3.3T1G |
LRC |
Dual Integrated Circuit N-Channel/PN Duals | |
7 | LBSS138WT1G |
Leshan Radio Company |
Power MOSFET | |
8 | LBSS138WT3G |
Leshan Radio Company |
Power MOSFET | |
9 | LBSS139LT1G |
LRC |
Power MOSFET | |
10 | LBSS8402DW1T1G |
LRC |
Power MOSFET | |
11 | LBSS8402DW1T3G |
LRC |
Power MOSFET | |
12 | LBSS84DW1T1G |
LRC |
Power MOSFET |