LB3036 - VBsemi

LB3036 N-Channel MOSFET

LB3036-VB PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V RDS(on) (Ω) at VGS = 4.5 V ID (A) Configuration LB3036-VB Datasheet N-Channel 60 V (D-S) MOSFET www.VBsemi.com 60 0.0016 0.0020 270 Single FEATURES • TrenchFET® power MOSFET • Package with low thermal resistance • 100 % Rg and UIS tested TO-220AB D Top View S D G G S N-Channel MOSFET ABSOL.

Features

• TrenchFET® power MOSFET
• Package with low thermal resistance
• 100 % Rg and UIS tested TO-220AB D Top View S D G G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation b Operating Junction and Storage Temperature Range TC = 25 °C TC = 125 °C L = 0.1 mH TC = 25 °C TC = 125 °C VDS VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT.