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L9015RLT3G - Leshan Radio Company

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L9015RLT3G General Purpose Transistors

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE ƽComplementary to L9014. ƽ We declare that the material of product compliance with RoHS requirements. ƽ S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. L9015QLT1G Series S-L9015QLT1G Series .

Features

e, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA=25 oC Derate above 25oC Thermal Resistance, Junction to Ambient Junction and Storage Temperature 1. FR
  –5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Symbol PD RJA PD RJA TJ ,Tstg Max 225 1.8 556 300 2.4 417 -55 to +150 Unit mW mW/oC oC/W mW mW/oC oC/W oC 3 1 2 SOT
  – 23 COLLECTOR 3 1 BASE 2 EMITTER Rev.O 1/4 LESHAN RADIO COMPANY, LTD. L9015QLT1G Series S-L9015QLT1G Series ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) OFF CHARACTERISTICS Characteristic Collector-Emitter.

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