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L6372-VB www.VBsemi.com L6372-VB Datasheet Dual N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 0.016 at VGS = 10 V 30 0.020 at VGS = 4.5 V ID (A)a 8.5 7.6 Qg (Typ.) 7.1 FEATURES • TrenchFETPower MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Notebook System Power • Low Current D.
• TrenchFETPower MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Notebook System Power
• Low Current DC/DC
S1 1 G1 2 S2 3 G2 4
SO-8 Top View
8 D1 7 D1 6 D2 5 D2
D1
D2
G1
G2
S1 N-Channel MOSFET
S2 N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current Source-Drain Current Diode Current Pulsed Source-Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energy
Maximum Power Di.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | L6370Q |
STMicroelectronics |
2.5 A single high-side smart power switch |
|
| 2 | L6375S |
ST Microelectronics |
0.5A High Side Driver Industrial Intelligent Power Switch |
|
| 3 | L6316 |
STMicroelectronics |
4-CHANNEL LOW POWER PREAMPLIFIER |
|
| 4 | L634 |
ST Microelectronics |
THREE PHASE MOTOR DRIVER |
|
| 5 | L6360 |
STMicroelectronics |
IO-Link communication master transceiver |
|
| 6 | L6362 |
STMicroelectronics |
Fully integrated device transceiver IC |
|
| 7 | L6362A |
STMicroelectronics |
IO-Link communication transceiver |
|
| 8 | L6364 |
STMicroelectronics |
Dual-channel transceiver |
|
| 9 | L6382D |
ST Microelectronics |
Power management unit |
|
| 10 | L6382D5 |
STMicroelectronics |
Power management unit |
|
| 11 | L6384 |
STMicroelectronics |
HIGH-VOLTAGE HALF BRIDGE DRIVER |
|
| 12 | L6384E |
STMicroelectronics |
High voltage half-bridge driver |
|