L4202S - Thinki Semiconductor

L4202S Fast Recovery Epitaxial Diode

L4204S using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic. ABSOLUTE MAXIMUM RATINGS TC=25°C unless otherwise specified Symbol Parameter Test Conditions Values Unit VR V RRM I F(AV) I F(RMS) I FSM PD TJ T STG Torque Maximum D.C. Reverse Voltage Maximum Repetitive Reverse Voltage Average Forwar.

Features

r Dissipation Junction Temperature Storage Temperature Range Module-to-Sink TC=110°C, Per Diode TC=110°C, Per Package TC=110°C, Per Diode TJ=45°C, t=10ms, 50Hz, Sine Recommended（M3） 400 400 10 20 14 100 83 -40 to +150 -40 to +150 1.1 V V A A A A W °C °C N
·m R θJC Thermal Resistance Junction-to-Case 1.5 °C /W Weight 6g ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise specified Symbol Parameter Test Conditions Min. Typ. Max. Unit IRM Reverse Leakage Current VR=400V VR=400V, TJ=125°C -- -- 15 µA -- -- 250 µA VF Forward Voltage I F =10A IF=10A, TJ=125°C -- 1.00 --- 0.87 -- .