L2SC4083PT3G - Leshan Radio Company

L2SC4083PT3G High-Frequency Amplifier Transistor

LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor z We declare that the material of product compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. L2SC4083NT1G Series S-L2SC4083NT1G Series Ordering Information Device L2SC.

Features

ristics (Ta=25 oC) Parameter Symbol Min. Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Collector-base time constant Noise factor BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob rbb'
·Cc NF 20 11 3 56 1.4 Typ. 3.2 0.8 4 3.5 Max. 0.5 0.5 0.5 270 1.5 12 Unit V V V uA uA V GHz pF ps dB Conditions IC = 10 µA IC = 1mA IE = 10 µA VCB = 10V VEB = 2V IC/IB = 10mA/5mA VCE/IC = 10V/5mA VCB = 10.