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LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE ƽLow Cob,Cob=2pF(Typ.). L2SC4081QT1G Series S-L2SC4081QT1G Series ƽEpitaxial planar type. ƽPNP complement:L2SA1576A ƽWe declare that the material of product compliance with RoHS requirements. 3 ƽS- Prefix for Automotive and Other Applications Requiring Unique Site and Control .
tor power dissipation
PC
Junction temperature
Tj
Storage temperature
T stg
50 V 60 V 7.0 V 150 mAdc 0.15 W 150 °C -55 ~+150 °C
Rev.O 1/5
LESHAN RADIO COMPANY, LTD.
L2SC4081QT1G Series S-L2SC4081QT1G Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Collector
–Emitter Breakdown Voltage (IC = 1 mA) Emitter
–Base Breakdown Voltage (IE = 50 µA) Collector
–Base Breakdown Voltage (IC = 50 µA) Collector Cutoff Current (VCB = 60 V) Emitter cutoff current (VEB = 7 V) Collector-emitter saturation voltage (IC/ IB = 50 mA / 5m A) DC current transfer ratio (V CE = .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | L2SC4081ST1 |
Leshan Radio Company |
General Purpose Transistors NPN Silicon |
|
| 2 | L2SC4081ST1G |
Leshan Radio Company |
General Purpose Transistors |
|
| 3 | L2SC4081QT1 |
Leshan Radio Company |
General Purpose Transistors NPN Silicon |
|
| 4 | L2SC4081QT1G |
Leshan Radio Company |
General Purpose Transistors |
|
| 5 | L2SC4081QT3G |
Leshan Radio Company |
General Purpose Transistors |
|
| 6 | L2SC4081RT1 |
Leshan Radio Company |
General Purpose Transistors NPN Silicon |
|
| 7 | L2SC4081RT1G |
Leshan Radio Company |
General Purpose Transistors |
|
| 8 | L2SC4081RT3G |
Leshan Radio Company |
General Purpose Transistors |
|
| 9 | L2SC4083NT1G |
Leshan Radio Company |
High-Frequency Amplifier Transistor |
|
| 10 | L2SC4083NT3G |
Leshan Radio Company |
High-Frequency Amplifier Transistor |
|
| 11 | L2SC4083NWT1 |
Leshan Radio Company |
High-Frequency Amplifier Transistor |
|
| 12 | L2SC4083NWT1G |
Leshan Radio Company |
High-Frequency Amplifier Transistor |
|