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LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon z We declare that the material of product compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. z DEVICE MARKING AND ORDERING INFORMATION Device L2SA1774QT1G S-L2SA1.
-89 COLLECTOR 3 1 BASE 2 EMITTER !Electrical characteristics (Ta=25°C) Parameter Symbol Collector-base breakdown voltage BVCBO Collector-emitter breakdown voltage BVCEO Emitter-base breakdown voltage BVEBO Collector cutoff current ICBO Emitter cutoff current IEBO Collector-emitter saturation voltage VCE(sat) DC current transfer ratio hFE Transition frequency fT Output capacitance Cob Min. −60 −50 −6 − − − 120 − − Typ. − − − − − − − 140 4.0 Max. − − − −0.1 −0.1 −0.5 560 − 5.0 Unit V V V µA µA V − MHz pF Conditions IC=−50µA IC=−1µA IE=−50µA VCB=−60V VEB=−6V IC/IB=−50mA/.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | L2SA1774RT3G |
Leshan Radio Company |
General Purpose Transistors |
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| 2 | L2SA1774QT1G |
Leshan Radio Company |
General Purpose Transistors |
|
| 3 | L2SA1774QT3G |
Leshan Radio Company |
General Purpose Transistors |
|
| 4 | L2SA1774ST1G |
Leshan Radio Company |
General Purpose Transistors |
|
| 5 | L2SA1774ST3G |
Leshan Radio Company |
General Purpose Transistors |
|
| 6 | L2SA1036KPLT1 |
Leshan Radio Company |
Medium Power Transistor |
|
| 7 | L2SA1036KQLT1 |
Leshan Radio Company |
Medium Power Transistor |
|
| 8 | L2SA1036KQLT1G |
Leshan Radio Company |
Medium Power Transistor |
|
| 9 | L2SA1036KRLT1 |
Leshan Radio Company |
Medium Power Transistor |
|
| 10 | L2SA1036KRLT1G |
Leshan Radio Company |
Medium Power Transistor |
|
| 11 | L2SA1036KxLT1 |
Leshan Radio Company |
Medium Power Transistor |
|
| 12 | L2SA1037AKQLT1 |
Leshan Radio Company |
General Purpose Transistors |
|