L2SA1576AxT1 - Leshan Radio Company

L2SA1576AxT1 General Purpose Transistors PNP Silicon

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon 3 COLLECTOR L2SA1576A*T1 3 www.DataSheet4U.com 1 BASE 1 2 EMITTER 2 SC-70/SOT– 323 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Collector power dissipation Junction temperature Storage temperature Symbol V C.

Features

utput capacitance (V CB =
  – 12 V, I E= 0A, f =1MHz ) V CE(sat) h FE fT C ob — 120 — — —
  –
  – 140 4.0 -0.5 560
  –
  – 5.0 V
  –
  – MHz pF Symbol V (BR)CEO Min
  – 50
  –6
  – 60 — — Typ — — — — — Max — — —
  – 0.1
  – 0.1 Unit V V V µA µA V (BR)EBO V (BR)CBO I CBO I EBO h FE values are classified as follows: hFE
* Q 120~270 R 180~390 S 270~560 L2SA1576A
*T1
  –1/4 LESHAN RADIO COMPANY, LTD. L2SA1576A
*T1 Fig.1 Grounded emitter propagation characteristics
  –50 Fig.2 Grounded emitter output characteristics( )
  –10
  –35.0 T A = 25°C
  –31.5
  –28.0
  –24.5
  –20 I C, COLLECTOR CURRENT (mA) I C, COLLECTOR CURRENT (m.