L034 - IXYS Corporation

L034 MegaMOSTMFET Module

MegaMOSTMFET Module N-Channel Enhancement Mode VMO 380-02 F VDSS ID25 RDS(on) 1 11 = 200 V = 385 A = 4.6 mΩ Preliminary data 10 2 11 2 1 10 Symbol VDSS VDGR V GS V GSM I D25 I DM PD TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; R GS = 10 kΩ Continuous Transient T K = 25°C T K = 25 °C, t P = 10 µs TC = 25°C T K = 25°C.

Features

q q 1 = Drain 10 = Kelvin Source 2 = Source 11 = Gate 50/60 Hz IISOL ≤ 1 mA t = 1 min t=1s 3000 3600 q q q Mounting torque (M6) Terminal connection torque (M5) typical including screws 2.25-2.75/20-25 Nm/lb.in. 2.5-3.7/22-33 Nm/lb.in. 250 g q International standard package Direct Copper Bonded Al2O3 ceramic base plate Isolation voltage 3600 V~ Low RDS(on) HDMOSTM process Low package inductance for high speed switching Kelvin Source contact for easy drive Applications Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. 200 3 6 ±500 TJ .