SEMICONDUCTOR TECHNICAL DATA HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. FEATURE ᴌHigh Power Gain : Gpe=29dB(Typ.) at f=10.7MHz. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage .
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | KTC9012 |
KEC |
EPITAXIAL PLANAR PNP TRANSISTOR | |
2 | KTC9012S |
KEC |
EPITAXIAL PLANAR PNP TRANSISTOR | |
3 | KTC9012SC |
KEC |
EPITAXIAL PLANAR PNP TRANSISTOR | |
4 | KTC9013 |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR | |
5 | KTC9013SC |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR | |
6 | KTC9014 |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR | |
7 | KTC9014A |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR | |
8 | KTC9014S |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR | |
9 | KTC9014SC |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR | |
10 | KTC9015 |
KEC |
EPITAXIAL PLANAR PNP TRANSISTOR | |
11 | KTC9015A |
KEC |
EPITAXIAL PLANAR PNP TRANSISTOR | |
12 | KTC9015S |
KEC |
EPITAXIAL PLANAR PNP TRANSISTOR |